On the origin of strong visible photoluminescence in a Ge/porous Si structure
نویسندگان
چکیده
We have studied the origin of strong visible photoluminescence ~PL! in a Ge/porous Si ~PS! structure in terms of infrared spectroscopy and electron spin resonance ~ESR!. Spectral analyses indicate that the enhanced PL cannot arise from both the quantum confinement on Ge nanocrystals embedded in the pores and the chemical compound of Ge, O, and H at the surface of the porous Si formed during Ge deposition. The experimental result from ESR strongly suggests that optical transitions in the oxygen-related defect centers ~nonbridging oxygen hole centers! at the interface between PS and the Ge layer are responsible for the enhanced PL. © 1999 American Institute of Physics. @S0003-6951~99!00406-4#
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